SiC MOSFET

SiC MOSFET
low on-resistance, low parasitic capacitance, low switching loss, simple drive and easy parallel connection
Advantages: improve system efficiency; reduce the requirements of cooling system; promote power density and system switching frequency
Part No.
Package
BVDS(V)
RDS(on) (mΩ)
VGS(th)(V) (Typ.)
Continuous Drain Current(A)(max)
IDSS(μA) (Typ.)
VSD(V)(Typ.)
TJ(max)(℃)
Data Sheet
N1M065017PD TO-247-3 650 17 2.6 118 1 4.2 175
N1M065030PD TO-247-3 650 30 2.6 70 1 4.2 175
N1M065060PD TO-247-3 650 60 2.6 39 1 4.2 175
N1M065017PK TO-247-4 650 17 2.6 118 1 4.2 175
N1M065030PK TO-247-4 650 30 2.6 70 1 4.2 175
N1M065060PK TO-247-4 650 60 2.6 39 1 4.2 175
N1M120021PN TO-263-7 1200 21 2.7 100 1 4.1 175
N1M120040PN TO-263-7 1200 40 2.7 60 1 4.1 175
N1M120080PN TO-263-7 1200 80 2.7 36 1 4 150
N1M120021PK TO-247-4 1200 21 2.7 100 1 4.1 175
N1M120040PK TO-247-4 1200 40 2.7 60 1 4.1 175
N1M120080PK TO-247-4 1200 80 2.7 36 1 4 150
N1M120021PD TO-247-3 1200 21 2.7 100 1 4.1 175
N1M120040PD TO-247-3 1200 40 2.7 60 1 4.1 175
N1M120080PD TO-247-3 1200 80 2.7 36 1 4 150
XML 地图 | Sitemap 地图